Isotopic Equivalence from Bezier Curve Subdivision

We prove that the control polygon of a Bezier curve B becomes homeomorphic and ambient isotopic to B via subdivision, and we provide closed-form formulas to compute the number of iterations to ensure these topological characteristics. We first show that the exterior angles of control polygons converge exponentially to zero under subdivision.Comment: arXiv admin note: substantial text overlap with arXiv:1211.035

Hydrographs by Single Linear Reservoir Model

A single linear reservoir (SLR) model is presented which provides a simple means for developing runoff hydrographs for small, urban watersheds. The model only requires one parameter, K, which can be estimated from watershed and precipitation characteristics. Several methods for estimating K and the results of testing the model on various watersheds are presented.Waller Creek Working Grou

Precision CW laser automatic tracking system investigated

Precision laser tracker capable of tracking a low acceleration target to an accuracy of about 20 microradians rms is being constructed and tested. This laser tracking has the advantage of discriminating against other optical sources and the capability of simultaneously measuring range

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame